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In electronics, a short-channel effect is an effect whereby a MOSFET in which the channel length is the same order of magnitude as the depletion-layer widths (xdD, xdS) of the source and drain junction, behaves differently from other MOSFETs. As the channel length L is reduced to increase both the operation speed and the number of components per chip, the so-called short-channel effects arise.〔 (【引用サイトリンク】 Short-Channel Effects in MOSFETs )〕 The short-channel effects are attributed to two physical phenomena: # the limitation imposed on electron drift characteristics in the channel, # the modification of the threshold voltage due to the shortening channel length. In particular five different short-channel effects can be distinguished:〔http://ecee.colorado.edu/~bart/book/book/chapter7/ch7_7.htm〕 # drain-induced barrier lowering and punchthrough # surface scattering # velocity saturation # impact ionization # hot electron effect == References == 抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)』 ■ウィキペディアで「Short-channel effect」の詳細全文を読む スポンサード リンク
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